Vertical semiconductor diode manufactured with an engineered substrate

ABSTRACT

A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 15/684,753, filed on Aug. 23, 2017, which claims priority toU.S. Provisional Patent Application No. 62/378,382, filed on Aug. 23,2016, and is related to U.S. patent application Ser. No. 15/684,724,filed on Aug. 23, 2017, entitled “ELECTRONIC POWER DEVICES INTEGRATEDWITH AN ENGINEERED SUBSTRATE,” the disclosures of which are herebyincorporated by reference in its entirety for all purposes.

BACKGROUND OF THE INVENTION

Gallium nitride based power devices are typically epitaxially grown onsapphire substrates. The growth of gallium nitride based power deviceson a sapphire substrate is a heteroepitaxial growth process since thesubstrate and the epitaxial layers are composed of different materials.Due to the heteroepitaxial growth process, the epitaxially grownmaterial can exhibit a variety of adverse effects, including reduceduniformity and reductions in metrics associated with theelectronic/optical properties of the epitaxial layers. Accordingly,there is a need in the art for improved methods and systems related toepitaxial growth processes and substrate structures.

SUMMARY OF THE INVENTION

The present invention relates generally to power devices formed onengineered substrate structures. More specifically, the presentinvention relates to methods and systems suitable for fabricating powerdevices using epitaxial growth processes. As described herein, someembodiments of the present invention have been applied to methods andsystems for fabricating power devices and semiconductor diodes on asubstrate structure by epitaxial growth, wherein the substrate structureis characterized by a coefficient of thermal expansion (CTE) that issubstantially matched to epitaxial layers that form the power devices.The methods and techniques can be applied to a variety of semiconductorprocessing operations.

According to an embodiment of the present invention, a power device isprovided. The power device includes a substrate comprising apolycrystalline ceramic core, a first adhesion layer coupled to thepolycrystalline ceramic core, a barrier layer coupled to the firstadhesion layer, a bonding layer coupled to the barrier layer, and asubstantially single crystal layer coupled to the bonding layer. Thepower device also includes a buffer layer coupled to the substantiallysingle crystal layer and a channel region coupled to the buffer layer.The channel region includes a first end, a second end, and a centralportion disposed between the first end and the second end. The channelregion also includes a channel region barrier layer coupled to thebuffer layer. The power device further includes a source contactdisposed at the first end of the channel region, a drain contactdisposed at the second end of the channel region, and a gate contactcoupled to the channel region.

According to another embodiment of the present invention, a method offorming a power device is provided. The method includes forming asubstrate by providing a polycrystalline ceramic core, encapsulating thepolycrystalline ceramic core with a first adhesion shell, encapsulatingthe first adhesion shell with a barrier layer, forming a bonding layeron the barrier layer, and joining a substantially single crystal layerto the bonding layer. The method also includes forming a buffer layer onthe substantially single crystal layer and forming a channel region onthe buffer layer by forming an epitaxial channel region barrier layer onthe buffer layer. The channel region has a first end and a second end,and a central portion between the first end and the second end. Themethod also includes forming a source contact at the first end of thechannel region, forming a drain contact at the second end of the channelregion, and forming a gate contact on the channel region.

According to a particular embodiment of the present invention, asemiconductor diode is provided. The semiconductor diode includes asubstrate including a polycrystalline ceramic core, a first adhesionlayer coupled to the polycrystalline ceramic core, a barrier layercoupled to the first adhesion layer, a bonding layer coupled to thebarrier layer, and a substantially single crystal layer coupled to thebonding layer. The semiconductor diode also includes a buffer layercoupled to the substantially single crystal layer, a semi-insulatinglayer coupled to the buffer layer, and a first N-type gallium nitridelayer coupled to the semi-insulating layer. The first N-type galliumnitride layer has a first doping concentration. The semiconductor diodefurther includes a second N-type gallium nitride layer coupled to thefirst N-type gallium nitride layer. The second N-type gallium nitridelayer has a second doping concentration less than the first dopingconcentration. Moreover, the semiconductor diode includes a P-typegallium nitride layer coupled to the second N-type gallium nitridelayer, an anode contact coupled to the P-type gallium nitride layer, anda cathode contact coupled to a portion of the first N-type galliumnitride layer.

According to another particular embodiment of the present invention, amethod of forming a semiconductor diode is provided. The method includesforming a substrate by providing a polycrystalline ceramic core,encapsulating the polycrystalline ceramic core with a first adhesionshell, encapsulating the first adhesion shell with a barrier layer,forming a bonding layer on the barrier layer, and joining asubstantially single crystal layer to the bonding layer. The method alsoincludes forming a buffer layer on the substantially single crystallayer, forming a semi-insulating layer on the buffer layer, and forminga first epitaxial N-type gallium nitride layer on the semi-insulatinglayer. The first epitaxial N-type gallium nitride layer has a firstdoping concentration. The method further includes forming a secondepitaxial N-type gallium nitride layer on the first epitaxial N-typegallium nitride layer. The second epitaxial N-type gallium nitride layerhas a second doping concentration less than the first dopingconcentration. Additionally, the method includes forming an epitaxialP-type gallium nitride layer on the second epitaxial N-type galliumnitride layer, removing a portion of the second epitaxial N-type galliumnitride layer and a portion of the epitaxial P-type gallium nitridelayer to expose a portion of the first epitaxial N-type gallium nitridelayer, forming an anode contact on a remaining portion of the epitaxialP-type gallium nitride layer, and forming a cathode contact on theexposed portion of the first epitaxial N-type gallium nitride layer.

According to a specific embodiment of the present invention, a method offorming a semiconductor diode is provided. The method includes forming asubstrate by providing a polycrystalline ceramic core, encapsulating thepolycrystalline ceramic core with a first adhesion shell, encapsulatingthe first adhesion shell with a barrier layer, forming a bonding layeron the barrier layer, and joining a substantially single crystal layerto the bonding layer. The method also includes forming a first epitaxialN-type gallium nitride layer on the substantially single crystal layerand forming a second epitaxial N-type gallium nitride layer on the firstepitaxial N-type gallium nitride layer. The first epitaxial N-typegallium nitride layer has a first doping concentration and the secondepitaxial N-type gallium nitride layer has a second doping concentrationless than the first doping concentration. The method further includesforming an epitaxial P-type gallium nitride layer on the secondepitaxial N-type gallium nitride layer, removing a portion of thesubstrate to expose a surface of the first epitaxial N-type galliumnitride layer, forming an anode contact on the epitaxial P-type galliumnitride layer, and forming a cathode contact on the exposed surface ofthe first epitaxial N-type gallium nitride layer.

According to another specific embodiment of the present invention, apower device is provided. The power device includes a substratecomprising a polycrystalline ceramic core, a first adhesion layercoupled to the polycrystalline ceramic core, a barrier layer coupled tothe first adhesion layer, a bonding layer coupled to the barrier layer,and a substantially single crystal layer coupled to the bonding layer.The power device also includes a buffer layer coupled to thesubstantially single crystal layer and a channel region coupled to thebuffer layer. The channel region comprises a first end, a second end,and a central portion disposed between the first end and the second end.The channel region includes a channel region barrier layer coupled tothe buffer layer and a source contact disposed at the first end of thechannel region. The device further includes a drain contact disposed atthe second end of the channel region and a gate contact coupled to thechannel region. As an example, the buffer layer can include at least oneof a III-V semiconductor material, silicon germanium, aluminum galliumnitride, indium gallium nitride, or indium aluminum gallium nitride.

Numerous benefits are achieved by way of the present invention overconventional techniques. For example, embodiments of the presentinvention provide power devices and semiconductor diodes formed onengineered substrates that have a coefficient of thermal expansion (CTE)that is substantially matched to the CTE of the epitaxial layers of thedevices. Matching the thermal expansion properties of the growthsubstrate to the epitaxial layer reduces the stress in the epitaxiallayers and/or the engineered substrate. Stress is responsible forseveral types of defects. For example, stress may increase dislocationdensity in the epitaxial layer, which impairs electrical and opticalproperties of the epitaxial layer. Stress may also lead to residualstrain in the epitaxial layer or the substrate, which may lead toadditional processing concern in later steps, such as stress cracking,dislocation glide, slip, bow and warp. Thermal expansion induced bow andwarp of the substrate may make handling of the material problematic inautomated equipment, and limit the ability to perform additionallithographic steps necessary for device fabrication, substrate cracking,and materials creep. In addition, the device performance lifetime isreduced in stressed materials. Stress relaxation and stress-inducedcrack propagation, dislocation glide, and other lattice movementresulting from thermal mismatch may lead to early failures in a range ofmodes, from reduced device performance to fracture or peeling of devicesand device layers.

These and other embodiments of the invention along with many of itsadvantages and features are described in more detail in conjunction withthe text below and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure according to an embodiment of the presentinvention.

FIG. 2A is a SIMS profile illustrating species concentration as afunction of depth for an engineered structure according to an embodimentof the present invention.

FIG. 2B is a SIMS profile illustrating species concentration as afunction of depth for an engineered structure after anneal according toan embodiment of the present invention.

FIG. 2C is a SIMS profile illustrating species concentration as afunction of depth for an engineered structure with a silicon nitridelayer after anneal according to an embodiment of the present invention.

FIG. 3 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure according to another embodiment of thepresent invention.

FIG. 4 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure according to yet another embodiment ofthe present invention.

FIG. 5 is a simplified flowchart illustrating a method of fabricating anengineered substrate according to an embodiment of the presentinvention.

FIG. 6 is a simplified flowchart illustrating a method of fabricating anengineered substrate according to another embodiment of the presentinvention.

FIG. 7 is a simplified schematic cross-sectional diagram illustrating anepitaxial/engineered substrate structure for RF and power applicationsaccording to an embodiment of the present invention.

FIG. 8A is a simplified schematic diagram illustrating a III-V epitaxiallayer on an engineered substrate structure according to an embodiment ofthe present invention.

FIG. 8B is a simplified schematic plan view illustrating viaconfigurations for a semiconductor device formed on an engineeredsubstrate according to another embodiment of the present invention.

FIG. 9 is a simplified schematic cross-sectional diagram illustrating alateral power device formed on an engineered substrate according to anembodiment of the present invention.

FIG. 10 is a simplified flowchart illustrating a method of fabricating alateral power device on an engineered substrate according to anembodiment of the present invention.

FIG. 11A is a simplified schematic cross-sectional diagram illustratinga lateral power device formed on an engineered substrate according toanother embodiment of the present invention.

FIG. 11B is a simplified schematic cross-sectional diagram illustratinga lateral power device formed on an engineered substrate according toanother embodiment of the present invention.

FIG. 11C is a simplified schematic cross sectional diagram illustratingan exploded view of the P-type gallium nitride structure according to anembodiment of the present invention.

FIG. 12 is a simplified flowchart illustrating a method of fabricating alateral power device on an engineered substrate according to anotherembodiment of the present invention.

FIG. 13 is a simplified schematic cross-sectional diagram illustrating avertical semiconductor diode formed on an engineered substrate accordingto an embodiment of the present invention.

FIG. 14 is a simplified flowchart illustrating a method of fabricating avertical semiconductor diode on an engineered substrate according toanother embodiment of the present invention.

FIG. 15 is a simplified schematic cross-sectional diagram illustrating avertical semiconductor diode formed on an engineered substrate accordingto another embodiment of the present invention.

FIG. 16 is a simplified flowchart illustrating a method of fabricating avertical semiconductor diode on an engineered substrate according toanother embodiment of the present invention.

FIG. 17 is a simplified schematic cross-sectional diagram illustrating asemiconductor device formed on an engineered substrate according to anembodiment of the present invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

The present invention relates generally to power devices formed onengineered substrate structures. More specifically, the presentinvention relates to methods and systems suitable for fabricating powerdevices using epitaxial growth processes. Merely by way of example, theinvention has been applied to a method and system for fabricating powerdevices on a substrate structure by epitaxial growth, wherein thesubstrate structure is characterized by a coefficient of thermalexpansion (CTE) that is substantially matched to epitaxial layers thatform the power devices. The methods and techniques can be applied to avariety of semiconductor processing operations.

FIG. 1 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure according to an embodiment of the presentinvention. The engineered substrate 100 illustrated in FIG. 1 issuitable for a variety of electronic and optical applications. Theengineered substrate 100 includes a core 110 that can have a coefficientof thermal expansion (CTE) that is substantially matched to the CTE ofthe epitaxial material that will be grown on the engineered substrate100. Epitaxial material 130 is illustrated as optional because it is notrequired as an element of the engineered substrate 100, but willtypically be grown on the engineered substrate 100.

For applications including the growth of gallium nitride (GaN)-basedmaterials (epitaxial layers including GaN-based layers), the core 110can be a polycrystalline ceramic material, for example, polycrystallinealuminum nitride (AlN), which can include a binding material such asyttrium oxide. Other materials can be utilized in the core 110,including polycrystalline gallium nitride (GaN), polycrystallinealuminum gallium nitride (AlGaN), polycrystalline silicon carbide (SiC),polycrystalline zinc oxide (ZnO), polycrystalline gallium trioxide(Ga₂O₃), and the like.

The thickness of the core can be on the order of 100 to 1,500 μm, forexample, 725 μm. The core 110 is encapsulated in an adhesion layer 112that can be referred to as a shell or an encapsulating shell. In anembodiment, the adhesion layer 112 comprises a tetraethyl orthosilicate(TEOS) oxide layer on the order of 1,000 Å in thickness. In otherembodiments, the thickness of the adhesion layer varies, for example,from 100 Å to 2,000 Å. Although TEOS oxides are utilized for adhesionlayers in some embodiments, other materials that provide for adhesionbetween later deposited layers and underlying layers or materials (e.g.,ceramics, in particular, polycrystalline ceramics) can be utilizedaccording to an embodiment of the present invention. For example, SiO₂or other silicon oxides (Si_(x)O_(y)) adhere well to ceramic materialsand provide a suitable surface for subsequent deposition, for example,of conductive materials. In some embodiments, the adhesion layer 112completely surrounds the core 110 to form a fully encapsulated core. Theadhesion layer 112 can be formed using an LPCVD process. The adhesionlayer provides a surface on which subsequent layers adhere to formelements of the engineered substrate 100 structure.

In addition to the use of LPCVD processes, furnace-based processes, andthe like to form the encapsulating first adhesion layer, othersemiconductor processes can be utilized according to embodiments of thepresent invention, including CVD processes or similar depositionprocesses. As an example, a deposition process that coats a portion ofthe core can be utilized, the core can be flipped over, and thedeposition process could be repeated to coat additional portions of thecore. Thus, although LPCVD techniques are utilized in some embodimentsto provide a fully encapsulated structure, other film formationtechniques can be utilized depending on the particular application.

A conductive layer 114 is formed surrounding the adhesion layer 112. Inan embodiment, the conductive layer 114 is a shell of polysilicon (i.e.,polycrystalline silicon) that is formed surrounding the first adhesionlayer 112 since polysilicon can exhibit poor adhesion to ceramicmaterials. In embodiments in which the conductive layer 114 ispolysilicon, the thickness of the polysilicon layer can be on the orderof 500-5,000 Å, for example, 2,500 Å. In some embodiments, thepolysilicon layer can be formed as a shell to completely surround thefirst adhesion layer 112 (e.g., a TEOS oxide layer), thereby forming afully encapsulated first adhesion layer, and can be formed using anLPCVD process. In other embodiments, as discussed below, the conductivematerial can be formed on a portion of the adhesion layer, for example,a lower half of the substrate structure. In some embodiments, conductivematerial can be formed as a fully encapsulating layer and subsequentlyremoved on one side of the substrate structure.

In an embodiment, the conductive layer 114 can be a polysilicon layerdoped to provide a highly conductive material, for example, doped withboron to provide a P-type polysilicon layer. In some embodiments, thedoping with boron is at a level of 1×10¹⁹ cm⁻³ to 1×10²⁰ cm⁻³ to providefor high conductivity. Other dopants at different dopant concentrations(e.g., phosphorus, arsenic, bismuth, or the like at dopantconcentrations ranging from 1×10¹⁶ cm⁻³ to 5×10¹⁸ cm⁻³) can be utilizedto provide either N-type or P-type semiconductor materials suitable foruse in the conductive layer 114. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

The presence of the conductive layer 114 is useful during electrostaticchucking of the engineered substrate 100 to semiconductor processingtools, for example tools with electrostatic discharge (ESD) chucks. Theconductive layer 114 enables rapid dechucking after processing in thesemiconductor processing tools. Thus, embodiments of the presentinvention provide substrate structures that can be processed in mannersutilized with conventional silicon wafers. One of ordinary skill in theart would recognize many variations, modifications, and alternatives.

A second adhesion layer 116 (e.g., a TEOS oxide layer on the order of1,000 Å in thickness) is formed surrounding the conductive layer 114. Insome embodiments, the second adhesion layer 116 completely surrounds theconductive layer 114 to form a fully encapsulated structure. The secondadhesion layer 116 can be formed using an LPCVD process, a CVD process,or any other suitable deposition process, including the deposition of aspin-on dielectric.

A barrier layer 118, for example, a silicon nitride layer, is formedsurrounding the second adhesion layer 116. In an embodiment, the barrierlayer is a silicon nitride layer 118 that is on the order of 4,000 Å to5,000 Å in thickness. The barrier layer 118 completely surrounds thesecond adhesion layer 116 in some embodiments to form a fullyencapsulated structure and can be formed using an LPCVD process. Inaddition to silicon nitride layers, amorphous materials including SiCN,SiON, AlN, SiC, and the like can be utilized as barrier layers. In someimplementations, the barrier layer consists of a number of sub-layersthat are built up to form the barrier layer. Thus, the term barrierlayer is not intended to denote a single layer or a single material, butto encompass one or more materials layered in a composite manner. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

In some embodiments, the barrier layer, e.g., a silicon nitride layer,prevents diffusion and/or outgassing of elements present in the core 110into the environment of the semiconductor processing chambers in whichthe engineered substrate 100 could be present, for example, during ahigh temperature (e.g., 1,000° C.) epitaxial growth process. Elementspresent in the core 110 can include, for example, yttrium oxide (i.e.,yttria), oxygen, metallic impurities, other trace elements, and thelike. The elements diffused from the core 110 can cause unintentionaldoping in engineered layers 120/122. The elements outgassed from thecore 110 can travel through the chamber and adsorb elsewhere on thewafer causing impurities in engineered layers 120/122 and epitaxialmaterial 130. Utilizing the encapsulating layers described herein,ceramic materials, including polycrystalline AlN that are designed fornon-clean room environments, can be utilized in semiconductor processflows and clean room environments.

FIG. 2A is a secondary ion mass spectroscopy (SIMS) profile illustratingspecies concentration as a function of depth for an engineered structureaccording to an embodiment of the present invention. The x-axisrepresents the depth 202 from the surface of the engineered layers120/122 to the core 110. Line 208 represents the interface between theengineered layers 120/122 and the core 110. A first y-axis representsthe species concentration of atoms per cubic centimeter 204. A secondy-axis represents the signal intensity of the ions in counts per second206. The engineered structure in FIG. 2A did not include barrier layer118. Referring to FIG. 2A, several species present in the ceramic core110 (e.g., yttrium, calcium, and aluminum) drop to negligibleconcentrations in the engineered layers 120/122. The concentrations ofcalcium 210, yttrium 220, and aluminum 230 drop by three, four, and sixorders of magnitude, respectively.

FIG. 2B is a SIMS profile illustrating species concentration as afunction of depth for an engineered structure without a barrier layerafter anneal according to an embodiment of the present invention. Asdiscussed above, during semiconductor processing operations, theengineered substrate structures provided by embodiments of the presentinvention can be exposed to high temperatures (˜1,100° C.) for severalhours, for example, during epitaxial growth of GaN-based layers. For theprofile illustrated in FIG. 2B, the engineered substrate structure wasannealed at 1,100° C. for a period of four hours. As shown by FIG. 2B,calcium 210, yttrium 220, and aluminum 230, originally present in lowconcentrations in the engineered layers 120/122, have diffused into theengineered layers 120/122, reaching concentrations similar to otherelements.

Accordingly, embodiments of the present invention integrate a barrierlayer (e.g., a silicon nitride layer) to prevent out-diffusion of thebackground elements from the polycrystalline ceramic material (e.g., MN)into the engineered layers 120/122 and epitaxial material 130 such asthe optional GaN layer. The silicon nitride layer encapsulating theunderlying layers and material provides the desired barrier layer 118functionality.

FIG. 2C is a SIMS profile illustrating species concentration as afunction of depth for an engineered structure with a barrier layer 118,represented by dashed-line 240, after anneal according to an embodimentof the present invention. The integration of the diffusion barrier layer118 (e.g., a silicon nitride layer) into the engineered substratestructure prevents the diffusion of calcium, yttrium, and aluminum intothe engineered layers during the annealing process that occurred whenthe diffusion barrier layer was not present. As illustrated in FIG. 2C,calcium 210, yttrium 220, and aluminum 230 present in the ceramic coreremain at low concentrations in the engineered layers post-anneal. Thus,the use of the barrier layer 118 (e.g., a silicon nitride layer)prevents these elements from diffusing through the diffusion barrier andthereby prevents their release into the environment surrounding theengineered substrate. Similarly, any other impurities contained withinthe bulk ceramic material would be contained by the barrier layer.

Typically, ceramic materials utilized to form the core 110 are fired attemperatures in the range of 1,800° C. It would be expected that thisprocess would drive out a significant amount of impurities present inthe ceramic materials. These impurities can include yttrium, whichresults from the use of yttria as sintering agent, calcium, and otherelements and compounds. Subsequently, during epitaxial growth processes,which are conducted at much lower temperatures in the range of 800° C.to 1,100° C., it would be expected that the subsequent diffusion ofthese impurities would be insignificant. However, contrary toconventional expectations, the inventors have determined that evenduring epitaxial growth processes at temperatures much less than thefiring temperature of the ceramic materials, significant diffusion ofelements through the layers of the engineered substrate was present.

Thus, embodiments of the present invention integrate the barrier layer118 into the engineered substrate 100 to prevent this undesirablediffusion.

Referring once again to FIG. 1, a bonding layer 120 (e.g., a siliconoxide layer) is deposited on a portion of the barrier layer 118, forexample, the top surface of the barrier layer, and subsequently usedduring the bonding of a single crystal layer 122. The bonding layer 120can be approximately 1.5 μm in thickness in some embodiments. The singlecrystal layer 122 can include, for example, Si, SiC, sapphire, GaN, AlN,SiGe, Ge, Diamond, Ga₂O₃, AlGaN, InGaN, InN, and/or ZnO. In someembodiments, the single crystal layer can have a thickness from 0-0.5μm. The single crystal layer 122 is suitable for use as a growth layerduring an epitaxial growth process for the formation of epitaxialmaterial 130. The crystalline layers of the epitaxial material 130 arean extension of the underlying semiconductor lattice associated with thesingle crystal layer 122. The unique CTE matching properties of theengineered substrate 100 enable growth of thicker epitaxial material 130than existing technologies. In some embodiments, the epitaxial material130 includes a gallium nitride layer, 2 μm to 10 μm in thickness, whichcan be utilized as one of a plurality of layers utilized inoptoelectronic devices, power devices, and the like. In an embodiment,the bonding layer 120 includes a single crystal silicon layer that isattached to a silicon oxide barrier layer 118 using a layer transferprocess.

FIG. 3 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure according to an embodiment of the presentinvention. The engineered substrate 300 illustrated in FIG. 3 issuitable for a variety of electronic and optical applications. Theengineered substrate 300 includes a core 110 that can have a coefficientof thermal expansion (CTE) that is substantially matched to the CTE ofthe epitaxial material that will be grown on the engineered substrate300. Epitaxial material 130 is illustrated as optional because it is notrequired as an element of the engineered substrate structure, but willtypically be grown on the engineered substrate structure.

For applications including the growth of gallium nitride (GaN)-basedmaterials (epitaxial layers including GaN-based layers), the core 110can be a polycrystalline ceramic material, for example, polycrystallinealuminum nitride (AlN). The thickness of the core can be on the order of100 μm to 1,500 μm, for example, 725 μm. The core 110 is encapsulated inan adhesion layer 112 that can be referred to as a shell or anencapsulating shell. In this implementation, the adhesion layer 112completely encapsulates the core, but this is not required by thepresent invention, as discussed in additional detail with respect toFIG. 4.

In an embodiment, the adhesion layer 112 comprises a tetraethylorthosilicate (TEOS) oxide layer on the order of 1,000 Å in thickness.In other embodiments, the thickness of the adhesion layer varies, forexample, from 100 Å to 2,000 Å. Although TEOS oxides are utilized foradhesion layers in some embodiments, other materials that provide foradhesion between later deposited layers and underlying layers ormaterials can be utilized according to an embodiment of the presentinvention. For example, SiO₂, SiON, and the like adhere well to ceramicmaterials and provide a suitable surface for subsequent deposition of,for example, conductive materials. The adhesion layer 112 completelysurrounds the core 110 in some embodiments to form a fully encapsulatedcore and can be formed using an LPCVD process. The adhesion layer 112provides a surface on which subsequent layers adhere to form elements ofthe engineered substrate structure.

In addition to the use of LPCVD processes, furnace-based processes, andthe like to form the encapsulating adhesion layer 112, othersemiconductor processes can be utilized according to embodiments of thepresent invention. As an example, a deposition process, for example,CVD, PECVD, or the like, that coats a portion of the core 110 can beutilized, the core 110 can be flipped over, and the deposition processcould be repeated to coat additional portions of the core 110.

A conductive layer 314 is formed on at least a portion of the adhesionlayer 112. In an embodiment, the conductive layer 314 includespolysilicon (i.e., polycrystalline silicon) that is formed by adeposition process on a lower portion (e.g., the lower half or backside)of the structure formed by the core 110 and the adhesion layer 112. Inembodiments in which the conductive layer 314 is polysilicon, thethickness of the polysilicon layer can be on the order of a few thousandangstroms, for example, 3,000 Å. In some embodiments, the polysiliconlayer can be formed using an LPCVD process.

In an embodiment, the conductive layer 314 can be a polysilicon layerdoped to provide a highly conductive material, for example, theconductive layer 314 can be doped with boron to provide a P-typepolysilicon layer. In some embodiments, the doping with boron is at alevel ranging from about 1×10¹⁹ cm⁻³ to 1×10²⁰ cm⁻³ to provide for highconductivity. The presence of the conductive layer 314 is useful duringelectrostatic chucking of the engineered substrate to semiconductorprocessing tools, for example tools with electrostatic discharge (ESD)chucks. The conductive layer 314 enables rapid dechucking afterprocessing. Thus, embodiments of the present invention provide substratestructures that can be processed in manners utilized with conventionalsilicon wafers. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

A second adhesion layer 316 (e.g., a second TEOS oxide layer) is formedsurrounding the conductive layer 314 (e.g., a polysilicon layer). Thesecond adhesion layer 316 is on the order of 1,000 Å in thickness. Thesecond adhesion layer 316 completely surrounds the conductive layer 114in some embodiments to form a fully encapsulated structure and can beformed using an LPCVD process.

A barrier layer 118 (e.g., a silicon nitride layer) is formedsurrounding the second adhesion layer 316. The barrier layer 118 is onthe order of 4,000 Å to 5,000 Å in thickness in some embodiments. Thebarrier layer 118 completely surrounds the second adhesion layer 112 insome embodiments to form a fully encapsulated structure and can beformed using an LPCVD process.

In some embodiments, the use of a barrier layer 118 that includessilicon nitride prevents diffusion and/or outgassing of elements presentin the core 110 into the environment of the semiconductor processingchambers in which the engineered substrate could be present, forexample, during a high temperature (e.g., 1,000° C.) epitaxial growthprocess. Elements present in the core include, for example, yttriumoxide (i.e., yttria), oxygen, metallic impurities, other trace elementsand the like. Utilizing the encapsulating layers described herein,ceramic materials, including polycrystalline AlN, that are designed fornon-clean room environments can be utilized in semiconductor processflows and clean room environments.

In some embodiments, the engineered substrate 100 can be compliant withSemiconductor Equipment and Materials International (SEMI) standardspecifications. Because the engineered substrate 100 can be compliantwith SEMI specifications, the engineered substrate 100 can be used withexisting semiconductor fabrication tools. For example, wafer diameterfor the engineered substrate can be 4-inch, 6-inch, or 8-inch. In someembodiments, an 8-inch engineered substrate wafer can be 725-750 μm inthickness. In contrast, current silicon substrates used to manufacturegallium nitride epitaxial layers are not compliant with SEMIspecifications because the silicon substrates are 1050-1500 μm inthickness. As a result of the non-compliance, silicon substrates cannotbe used in equipment that complies with SEMI specifications.

FIG. 4 is a simplified schematic cross-sectional diagram illustrating anengineered substrate structure 400 according to another embodiment ofthe present invention. In the embodiment illustrated in FIG. 4, theadhesion layer 412 is formed on at least a portion of the core 110 butdoes not encapsulate the core 110. In this implementation, the adhesionlayer 412 is formed on a lower surface of the core (the backside of thecore) in order to enhance the adhesion of a subsequently formedconductive layer 414 as described more fully below. Although adhesionlayer 412 is only illustrated on the lower surface of the core in FIG.4, it will be appreciated that deposition of adhesion layer material onother portions of the core will not adversely affect the performance ofthe engineered substrates structure and such material can be present invarious embodiments. One of ordinary skill in the art would recognizemany variations, modifications, and alternatives.

The conductive layer 414, rather than being formed as a shell asillustrated in FIG. 3, does not encapsulate the adhesion layer 412 andcore 110, but is substantially aligned with the adhesion layer 412.Although the conductive layer 414 is illustrated as extending along thebottom or backside and up a portion of the sides of the adhesion layer412, this is not required by the present invention. Thus, embodimentscan utilize deposition on one side of the substrate structure, maskingof one side of the substrate structure, or the like. The conductivelayer 414 can be formed on a portion of one side, for example, thebottom/backside, of the adhesion layer 412. The conductive layer 414provides for electrical conduction on one side of the engineeredsubstrate structure 400, which can be advantageous in RF and high powerapplications. The conductive layer 414 can include doped polysilicon asdiscussed in relation to conductive layer 114 in FIG. 1. In addition tosemiconductor-based conductive layers, in other embodiments, theconductive layer 414 is a metallic layer, for example, 500 Å oftitanium, or the like.

Portions of the core 110, portions of the adhesion layer 412, and theconductive layer 414 are covered with a second adhesion layer 416 inorder to enhance the adhesion of the barrier layer 418 to the underlyingmaterials. The barrier layer 418 forms an encapsulating structure toprevent diffusion from underlying layers as discussed above in relationto FIGS. 2A, 2B, and 2C.

Referring once again to FIG. 4, depending on the implementation, one ormore layers may be removed. For example, layers 412 and 414 can beremoved, leaving only single adhesion shell 416 and barrier layer 418.In another embodiment, only layer 414 can be removed, leaving singleadhesion layer 412 underneath the barrier layer 416. In this embodiment,adhesion layer 412 may also balance the stress and the wafer bow inducedby bonding layer 120, deposited on top of barrier layer 418. Theconstruction of a substrate structure with insulating layers on the topside of core 110 (e.g., with only insulating layer between core 110 andbonding layer 120) will provide benefits for power/RF applications,where a highly insulating substrate is desirable.

In another embodiment, barrier layer 418 may directly encapsulate core110, followed by conductive layer 414 and subsequent adhesion layer 416.In this embodiment, bonding layer 120 may be directly deposited ontoadhesion layer 416 from the top side. In yet another embodiment,adhesion layer 416 may be deposited on core 110, followed by a barrierlayer 418, and then followed by conductive layer 414, and anotheradhesion layer 412.

Although some embodiments have been discussed in terms of a layer, theterm layer should be understood such that a layer can include a numberof sub-layers that are built up to form the layer of interest. Thus, theterm layer is not intended to denote a single layer consisting of asingle material, but to encompass one or more materials layered in acomposite manner to form the desired structure. One of ordinary skill inthe art would recognize many variations, modifications, andalternatives.

FIG. 5 is a simplified flowchart illustrating a method of fabricating anengineered substrate according to an embodiment of the presentinvention. The method can be utilized to manufacture a substrate that isCTE matched to one or more of the epitaxial layers grown on thesubstrate. The method 500 includes forming a support structure byproviding a polycrystalline ceramic core (510), encapsulating thepolycrystalline ceramic core in a first adhesion layer forming a shell(512) (e.g., a tetraethyl orthosilicate (TEOS) oxide shell), andencapsulating the first adhesion layer in a conductive shell (514)(e.g., a polysilicon shell). The first adhesion layer can be formed as asingle layer of TEOS oxide. The conductive shell can be formed as asingle layer of polysilicon.

The method also includes encapsulating the conductive shell in a secondadhesion layer (516) (e.g., a second TEOS oxide shell) and encapsulatingthe second adhesion layer in a barrier layer shell (518). The secondadhesion layer can be formed as a single layer of TEOS oxide. Thebarrier layer shell can be formed as a single layer of silicon nitride.

Once the support structure is formed by processes 510-518, the methodfurther includes joining a bonding layer (e.g., a silicon oxide layer)to the support structure (520) and joining a substantially singlecrystal layer, for example, a single crystal silicon layer, to thesilicon oxide layer (522). Other substantially single crystal layers canbe used according to embodiments of the present invention, includingSiC, sapphire, GaN, AlN, SiGe, Ge, Diamond, Ga₂O₃, ZnO, and the like.The joining of the bonding layer can include deposition of a bondingmaterial followed by planarization processes as described herein. In anembodiment as described below, joining the substantially single crystallayer (e.g., a single crystal silicon layer) to the bonding layerutilizes a layer transfer process in which the layer is a single crystalsilicon layer that is transferred from a silicon wafer.

Referring to FIG. 1, the bonding layer 120 can be formed by a depositionof a thick (e.g., 4 μm thick) oxide layer followed by a chemicalmechanical polishing (CMP) process to thin the oxide to approximately1.5 μm in thickness. The thick initial oxide serves to fill voids andsurface features present on the support structure that may be presentafter fabrication of the polycrystalline core and continue to be presentas the encapsulating layers illustrated in FIG. 1 are formed. The CMPprocess provides a substantially planar surface free of voids,particles, or other features, which can then be used during a wafertransfer process to bond the single crystal layer 122 (e.g., a singlecrystal silicon layer) to the bonding layer 120. It will be appreciatedthat the bonding layer does not have to be characterized by anatomically flat surface, but should provide a substantially planarsurface that will support bonding of the single crystal layer (e.g., asingle crystal silicon layer) with the desired reliability.

A layer transfer process is used to join the single crystal layer 122(e.g., a single crystal silicon layer) to the bonding layer 120. In someembodiments, a silicon wafer including the substantially single crystallayer 122 (e.g., a single crystal silicon layer) is implanted to form acleavage plane. In this embodiment, after wafer bonding, the siliconsubstrate can be removed along with the portion of the single crystalsilicon layer below the cleavage plane, resulting in an exfoliatedsingle crystal silicon layer. The thickness of the single crystal layer122 can be varied to meet the specifications of various applications.Moreover, the crystal orientation of the single crystal layer 122 can bevaried to meet the specifications of the application. Additionally, thedoping levels and profile in the single crystal layer can be varied tomeet the specifications of the particular application. In someembodiments, the depth of the implant may be adjusted to be greater thanthe desired final thickness of single crystal layer 122. The additionalthickness allows for the removal of the thin portion of the transferredsubstantially single crystal layer that is damaged, leaving behind theundamaged portion of the desired final thickness. In some embodiments,the surface roughness can be modified for high quality epitaxial growth.One of ordinary skill in the art would recognize many variations,modifications, and alternatives.

In some embodiments, the single crystal layer 122 can be thick enough toprovide a high quality lattice template for the subsequent growth of oneor more epitaxial layers but thin enough to be highly compliant. Thesingle crystal layer 122 may be said to be “compliant” when the singlecrystal layer 122 is relatively thin such that its physical propertiesare less constrained and able to mimic those of the materialssurrounding it with less propensity to generate crystalline defects. Thecompliance of the single crystal layer 122 may be inversely related tothe thickness of the single crystal layer 122. A higher compliance canresult in lower defect densities in the epitaxial layers grown on thetemplate and enable thicker epitaxial layer growth. In some embodiments,the thickness of the single crystal layer 122 may be increased byepitaxial growth of silicon on the exfoliated silicon layer.

In some embodiments, adjusting the final thickness of the single crystallayer 122 may be achieved through thermal oxidation of a top portion ofan exfoliated silicon layer, followed by an oxide layer strip withhydrogen fluoride (HF) acid. For example, an exfoliated silicon layerhaving an initial thickness of 0.5 μm may be thermally oxidized tocreate a silicon dioxide layer that is about 420 nm thick. After removalof the grown thermal oxide, the remaining silicon thickness in thetransferred layer may be about 53 nm. During thermal oxidation,implanted hydrogen may migrate toward the surface. Thus, the subsequentoxide layer strip may remove some damage. Also, thermal oxidation istypically performed at a temperature of 1000° C. or higher. The elevatedtemperature can may also repair lattice damage.

The silicon oxide layer formed on the top portion of the single crystallayer during thermal oxidation can be stripped using HF acid etching.The etching selectivity between silicon oxide and silicon (SiO₂:Si) byHF acid may be adjusted by adjusting the temperature and concentrationof the HF solution and the stoichiometry and density of the siliconoxide. Etch selectivity refers to the etch rate of one material relativeto another. The selectivity of the HF solution can range from about 10:1to about 100:1 for (SiO₂:Si). A high etch selectivity may reduce thesurface roughness by a similar factor from the initial surfaceroughness. However, the surface roughness of the resultant singlecrystal layer 122 may still be larger than desired. For example, a bulkSi (111) surface may have a root-mean-square (RMS) surface roughness ofless than 0.1 nm as determined by a 2 μm×2 μm atomic force microscope(AFM) scan before additional processing. In some embodiments, thedesired surface roughness for epitaxial growth of gallium nitridematerials on Si (111) may be, for example, less than 1 nm, less than 0.5nm, or less than 0.2 nm, on a 30 μm×30 μm AFM scan area.

If the surface roughness of the single crystal layer 122 after thermaloxidation and oxide layer strip exceeds the desired surface roughness,additional surface smoothing may be performed. There are several methodsof smoothing a silicon surface. These methods may include hydrogenannealing, laser trimming, plasma smoothing, and touch polish (e.g.,CMP). These methods may involve preferential attack of high aspect ratiosurface peaks. Hence, high aspect ratio features on the surface may beremoved more quickly than low aspect ratio features, thus resulting in asmoother surface.

It should be appreciated that the specific steps illustrated in FIG. 5provide a particular method of fabricating an engineered substrateaccording to an embodiment of the present invention. Other sequences ofsteps may also be performed according to alternative embodiments. Forexample, alternative embodiments of the present invention may performthe steps outlined above in a different order. Moreover, the individualsteps illustrated in FIG. 5 may include multiple sub-steps that may beperformed in various sequences as appropriate to the individual step.Furthermore, additional steps may be added or removed depending on theparticular applications. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 6 is a simplified flowchart illustrating a method of fabricating anengineered substrate according to another embodiment of the presentinvention. The method includes forming a support structure by providinga polycrystalline ceramic core (610), forming an adhesion layer coupledto at least a portion of the polycrystalline ceramic core (612). Thefirst adhesion layer can include a tetraethyl orthosilicate (TEOS) oxidelayer. The first adhesion layer can be formed as a single layer of TEOSoxide. The method also includes forming a conductive layer coupled tothe first adhesion layer (614). The conductive layer can be apolysilicon layer. The conductive layer can be formed as a single layerof polysilicon.

The method also includes forming a second adhesion layer coupled to atleast a portion of the first adhesion layer (616) and forming a barriershell (618). The second adhesion layer can be formed as a single layerof TEOS oxide. The barrier shell can be formed as a single layer ofsilicon nitride or a series of sub-layers forming the barrier shell.

Once the support structure is formed by processes 610-618, the methodfurther includes joining a bonding layer (e.g., a silicon oxide layer)to the support structure (620) and joining a single crystal siliconlayer or a substantially single crystal layer to the silicon oxide layer(622). The joining of the bonding layer can include deposition of abonding material followed by planarization processes as describedherein. In an embodiment as described below, joining the single crystallayer (e.g., a single crystal silicon layer) to the bonding layerutilizes a layer transfer process in which the single crystal siliconlayer is transferred from a silicon wafer.

It should be appreciated that the specific steps illustrated in FIG. 6provide a particular method of fabricating an engineered substrateaccording to another embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 6 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 7 is a simplified schematic cross-sectional diagram illustrating anepitaxial/engineered substrate structure 700 for RF and powerapplications according to an embodiment of the present invention. Insome LED applications, the engineered substrate structure provides agrowth substrate that enables the growth of high quality GaN layers andthe engineered substrate structure is subsequently removed. However, forRF and power device applications, the engineered substrate structureforms portions of the finished device and as a result, the electrical,thermal, and other properties of the engineered substrate structure orelements of the engineered substrate structure are important to theparticular application.

Referring to FIG. 1, the single crystal layer 122 can be an exfoliatedsingle crystal silicon layer split from a silicon donor wafer using animplant and exfoliation technique.

Typical implants are hydrogen and boron. For power and RF deviceapplications, the electrical properties of the layers and materials inthe engineered substrate structure are of importance. For example, somedevice architectures utilize highly insulating silicon layers withresistance greater than 103 Ohm-cm to reduce or eliminate leakagethrough the substrate and interface layers. Other applications utilizeddesigns that include a conductive silicon layer of a predeterminedthickness (e.g., 1 μm) in order to connect the source of the device toother elements. Thus, in these applications, control of the dimensionsand properties of the single crystal silicon layer is desirable. Indesign in which implant and exfoliation techniques are used during layertransfer, residual implant atoms, for example, hydrogen or boron, arepresent in the silicon layer, thereby altering the electricalproperties. Additionally, it can be difficult to control the thickness,conductivity, and other properties of thin silicon layers, using, forexample, adjustments in the implant dose, which can affect conductivity,and implant depth, which can affect layer thickness.

According to embodiments of the present invention, silicon epitaxy on anengineered substrate structure is utilized to achieve desired propertiesfor the single crystal silicon layer as appropriate to particular devicedesigns.

Referring to FIG. 7, the epitaxial/engineered substrate structure 700includes an engineered substrate structure 710 and an epitaxial singlecrystal layer 720 formed thereon. In some embodiments, the epitaxialsingle crystal layer 720 can be a single crystal silicon layer. Theengineered substrate structure 710 can be similar to the engineeredsubstrate structures illustrated in FIGS. 1, 3, and 4. Typically, thesingle crystal layer 122 (for example, a single crystal silicon layer)is on the order of 0.5 μm after layer transfer. Surface conditioningprocesses can be utilized to reduce the thickness of the single crystallayer 122 to about 0.3 μm in some processes. In order to increase thethickness of the single crystal layer 122 to about 1 μm for use inmaking reliable ohmic contacts, for example, an epitaxial process isused to grow epitaxial single crystal layer 720 on the single crystallayer 122 formed by the layer transfer process. A variety of epitaxialgrowth processes can be used to grow epitaxial single crystal layer 720,including CVD, LPCVD, ALD, MBE, or the like. The epitaxial singlecrystal layer 720 can include, for example, Si, SiC, sapphire, GaN, AlN,SiGe, Ge, Diamond, Ga₂O₃, and/or ZnO. The thickness of the epitaxialsingle crystal layer 720 can range from about 0.1 μm to about 20 μm, forexample between 0.1 μm and 10 μm.

FIG. 8A is a simplified schematic cross-sectional diagram illustrating aIII-V epitaxial layer on an engineered substrate structure according toan embodiment of the present invention. The structure illustrated inFIG. 8A can be referred to as a double epitaxial structure 800 asdescribed below. As illustrated in FIG. 8A, an engineered substratestructure 810 including an epitaxial single crystal layer 720 has aIII-V epitaxial layer 820 formed thereon. In an embodiment, the III-Vepitaxial layer comprises gallium nitride (GaN). In order to provide forelectrical conductivity between portions of the III-V epitaxial layer,which can include multiple sub-layers, a set of vias 824 are formedpassing, in this example, from a top surface of the III-V epitaxiallayer 820, into the epitaxial single crystal layer 720. FIG. 8A showsthe vias 824 extending through the epitaxial layer 820 to the epitaxialsingle crystal layer 720. As an example, these vias could be used toconnect an electrode of a diode or a transistor to the underlying layerby providing an ohmic contact through the vias 824, thereby relaxingcharge build up in the device. In some embodiments, one or more vias 824may be insulated on its side wall so that it is not electricallyconnected to the III-V epitaxial layer 820. The electrical contact mayfacilitate the removal of parasitic charges, thereby enabling fasterswitching of the power device.

In some embodiments, the via 826 can extend to the single crystal layer122. In order to address the difficulty of fabricating via 826 tocontact the single crystal layer 122, additional conducting epitaxiallayers 822 can be grown on the single crystal layer 122 and singlecrystal layer 720 to increase the size of a target conducting layer forthe via 826, that is, the thickness of the layer in which the viaterminates. Epitaxial single crystal layer 720 and III-V epitaxiallayers 820 can be formed thicker than on conventional substrates becauseof the unique CTE and diffusion properties of the engineered substratestructure 810. Therefore, existing substrate technologies cannot supportthe growth of enough defect free epitaxial layers to include conductingepitaxial layers 822 in a device. In some embodiments, the conductingepitaxial layers 822 can be AlN, AlGaN, GaN or a sufficiently dopedsemiconductor material. In particular embodiments, the thickness of theconducting epitaxial layers 822 can be 0.1-10 μm. In other embodiments,the thickness of the conducting epitaxial layers 822 can vary dependingon the semiconductor device requirements. In some embodiments, theengineered substrate structure and the single crystal layer 122 can beremoved exposing the epitaxial single crystal layer 720 and or theconducting epitaxial layers 822. A contact can be formed on the exposedepitaxial layers after substrate removal. One of ordinary skill in theart would recognize many variations, modifications, and alternatives.

In some embodiments, the III-V epitaxial layer can be grown on thesingle crystal layer 122. In order to terminate the vias in the singlecrystal layer 122, an ohmic contact using the vias can be made in a 0.3μm single crystal layer across an entire wafer. Utilizing embodiments ofthe present invention, it is possible to provide single crystal layersmultiple microns in thickness. Multiple micron thickness is difficult toachieve using implant and exfoliation processes since large implantdepth requires high implant energy. In turn, the thick epitaxial singlecrystal layers enable applications such as the illustrated vias thatenable a wide variety of device designs.

In addition to increasing the thickness of the “layer” by epitaxiallygrowing the epitaxial single crystal layer 720 on the single crystallayer 122, other adjustments can be made to the original properties ofthe single crystal layer 122, including modifications of theconductivity, crystallinity, and the like. For example, if a siliconlayer on the order of 10 μm is desired before additional epitaxialgrowth of III-V layers or other materials, such a thick layer can begrown according to embodiments of the present invention.

The implant process can impact the properties of the single crystallayer 122, for example, residual boron/hydrogen atoms can cause defectsthat influence the electrical properties of a silicon crystal layer. Insome embodiments of the present invention, a portion of the singlecrystal layer 122 can be removed prior to epitaxial growth of theepitaxial single crystal layer 720. For example, a single crystalsilicon layer can be thinned to form a layer 0.1 μm in thickness orless, removing most or all of the residual boron/hydrogen atoms.Subsequent growth of a single crystal silicon layer is then used toprovide a single crystal material with electrical and/or otherproperties substantially independent of the corresponding properties ofthe layer formed using layer transfer processes.

In addition to increasing the thickness of the single crystal siliconmaterial coupled to the engineered substrate structure, the electricalproperties, including the conductivity of the epitaxial single crystallayer 720, can be different from that of the single crystal layer 122.Doping of the epitaxial single crystal layer 720 during growth canproduce P-type silicon by doping with boron and N-type silicon by dopingwith phosphorus. Undoped silicon can be grown to provide highresistivity silicon used in devices that have insulating regions.Insulating layers can be of use in RF devices, in particular.

The lattice constant of the epitaxial single crystal layer 720 can beadjusted during growth to vary from the lattice constant of the singlecrystal layer 122 to produce strained epitaxial material. In addition tosilicon, other elements can be grown epitaxially to provide layers,including strained layers, that include silicon germanium, or the like.Additionally, the crystal orientation of the crystal planes, for examplegrowth of (111) silicon on (100) silicon, can be utilized to introducestrain. For instance, buffer layers can be grown on the single crystallayer 122, on the epitaxial single crystal layer 720, or between layers,to enhance subsequent epitaxial growth. These buffer layers couldinclude III-V semiconductor material layers such as aluminum galliumnitride, indium gallium nitride, and indium aluminum gallium nitride,silicon germanium strained layers, and the like. The strain of the III-Vsemiconductor material layers can be adjusted for desired materialproperties. Additionally, the buffer layers and other epitaxial layerscan be graded in mole fraction, dopants, polarity, or the like. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

In some embodiments, strain present in the single crystal layer 122 orthe epitaxial single crystal layer 720 may be relaxed during growth ofsubsequent epitaxial layers, including III-V epitaxial layers.

FIG. 8B is a simplified schematic plan view diagram illustrating fourdouble epitaxial structures according to an embodiment of the presentinvention. The double epitaxial structures illustrated in FIG. 8B eachinclude a set of vias 824. A first double epitaxial structure 830 showsa tight via configuration. A second double epitaxial structure 840 showsa dispersed via configuration. The dispersed via configuration uses vias824 in active regions of the device more likely to experience chargebuild up. A third double epitaxial structure 850 shows a pattern viaconfiguration. The pattern via configuration can space vias 824 equaldistances across the double epitaxial structure 850. A fourth doubleepitaxial structure 860 illustrates lateral vias 828. Lateral vias 828can be fabricated to travel substantially parallel to the epitaxiallayers of the double epitaxial structure 860 and contact the singlecrystal layer 122 at, for example, an edge 862. One of ordinary skill inthe art would recognize many variations, modifications, andalternatives.

The engineered substrates as described above may afford epitaxial growthof gallium nitride device layers thereon that are substantially latticematched to the engineered substrates and are characterized by acoefficient of thermal expansion (CTE) that is substantially matched tothat of the engineered substrates. Thus, engineered substrates mayprovide superior thermal stability and shape control. The engineeredsubstrates may also enable wafer diameter scaling with reuse capability.Relatively thick (e.g., greater than 20 μm) high quality epitaxialgallium nitride layers may be formed on the engineered substrates thatare crack free and characterized by low defect density and lowpost-epitaxial bow and stress. Multiple applications, such as powerdevices, radio frequency (RF) devices, monolithic microwave integratedcircuits (MMICs), displays, light-emitting diodes (LEDs), and the like,may be implemented on a single platform. Such engineered substrates mayalso be suitable for various device architectures, such as lateraldevices, vertical devices, chip scale package (CSP) devices, and thelike.

Gallium nitride (GaN) and similar wide bandgap semiconductor materialsoffer physical properties superior to those of silicon, which allow forpower semiconductor devices based on these materials to withstand highvoltages and temperatures. These properties also permit higher frequencyresponse, greater current density and faster switching. However, beforewide bandgap devices can gain commercial acceptance, their reliabilitymust be proven and the demand for higher reliability is growing. Thecontinuous drive for greater power density at the device and packagelevels creates consequences in terms of higher temperatures andtemperature gradients across the package. Using engineered substratesfor forming CTE-matched epitaxial device layers may alleviate manythermal-related failure mechanisms common for wide bandgap devices, asdescribed below.

Compound semiconductor devices, such as gallium nitride (GaN) based highelectron mobility transistors (HEMTs), may be subjected to high electricfields and high currents (e.g., large signal RF), while being driveninto deep saturation. Contact degradation, inverse piezoelectriceffects, hot electron effects, and self-heating are among some of thecommon problems. For example, Schottky and ohmic contacts may showincrease in contact resistance and exhibit passivation cracking fortemperatures greater than about 300° C. Inter-diffusion within the gatemetal stack and gallium out-diffusion into the metal layers may occur.Hot electron effect may occur when electrons accelerated in a largeelectric field gains very high kinetic energy. Hot electron effect maylead to trap formation in aluminum gallium nitride (AlGaN) layers, atAlGaN/GaN interfaces, at passivation layer/GaN cap layer interface, andin buffer layers.

Trap formation may in turn cause current collapse and gate lag, andthereby result in reversible degradations of transconductance andsaturated drain current. Slow current transients are observed even ifthe drain voltage or gate voltage is changed abruptly. The slowtransient response of the drain current when the drain-source voltage ispulsed is called the drain lag, or gate lag in the case of thegate-source voltage. When the voltage within the pulse is higher thanthe quiescent bias point, the buffer traps capture free charges. Thisphenomenon is very fast compared to the pulse length. When the voltagewithin the pulse is lower than the quiescent bias point, the trapsrelease their charges. This process can be very slow, possibly even in afew seconds. As the free carriers are captured and released, they do notcontribute to the output current instantaneously. This phenomenon is atthe origin of current transients.

The combined effect of drain lag and gate lag leads to current collapse(reduction in the two-dimensional electron gas [2-DEG] density). Thegate lag due to buffer traps becomes more pronounced when thedeep-acceptor density in the buffer layer is higher. Inversepiezoelectric effect may occur when high reverse bias on the gate leadsto crystallographic defect generation. Beyond a certain criticalvoltage, irreversible damage to a device may occur, which can provide aleakage path through the defects. Self-heating may occur under highpower stress and may result in thermal stress-strain. Compoundsemiconductor devices may also suffer from electric field drivendegradations, such as gate metallization and degradations of atcontacts, surfaces, and interfaces. Gate degradations may lead toincreases in leakage current and dielectric breakdown.

High Temperature Reverse Bias (HTRB) test is one of the most commonreliability tests for power devices. An HTRB test evaluates long-termstability under high drain-source bias. HTRB tests are intended toaccelerate failure mechanisms that are thermally activated through theuse of biased operating conditions. During an HTRB test, the devicesamples are stressed at or slightly less than the maximum rated reversebreakdown voltage at an ambient temperature close to their maximum ratedjunction temperature over an extended period (e.g., 1,000 hours). Thistest's high temperature accelerates failure mechanisms according to theArrhenius equation, which states the temperature dependence of reactionrates. Delamination, popping, device blow-up, and other mechanicalissues may occur during HTRB tests.

Failure mechanisms similar to time-dependent dielectric breakdown(TDDB), a common failure mechanism in MOSFETs, are also observed in gatedielectrics of wide bandgap semiconductor devices, such as GaN powerdevices. TDDB happens when the gate dielectric breaks down because oflong-time application of relatively low electric field (as opposite toimmediate breakdown, which is caused by strong electric field). Inaddition, failures during temperature cycling (TMCL) may be related topackage stress, bond pad metallization, mold compound, moisturesensitivity, and other package-level issues.

As discussed above, the engineered substrates may have CTEs matched tothat of the epitaxial GaN device layers grown thereon. The epitaxial GaNdevice layers may also be lattice matched to the engineered substrates.Therefore, the epitaxial GaN device layers may have lower defectdensities and higher qualities. Relatively thick drift regions may beformed by epitaxial growth. Also, large diameter wafers may be made fromthe engineered substrates, thereby lower manufacturing costs. Theengineered substrates may improve device reliability. For example,having CTEs matched to that of the epitaxial GaN devices may helpmitigate thermal stress, which is a critical factor in devicereliability. Device failures related to thermal stress may includethermally-activated drain-source breakdown, punch through effect,breakdown along the channel, breakdown through the buffer layer.Self-heating may also be reduced. In addition, high quality epitaxialGaN layers with low defect density may help improve device reliability,as some defects may be activated with voltage stress and may contributeto lateral and vertical leakage. High quality epitaxial GaN layers mayalso address issues such as localized non-stoichiometric regions thatcan affect field distributions and dislocation densities.

Traditional silicon-based MOSFET technology is nearly hitting thephysical limit of performance and switching speeds. Lateral GaN-basedhigh electron mobility transistors (HEMTs) offer an opportunity to gobeyond silicon-based MOSFET realm in medium to low-power systems, suchas solar inverters, compact power supply (PFC), switch-mode power supply(SMPS), motor drives, RF power amplifiers, solid state lighting (SSL),smart grid, and automotive motor drive systems. Lateral GaN-based HEMTsmay afford high efficiency, high-frequency operation, and low switchingand conduction loss, among many other advantages.

FIG. 9 is a simplified schematic cross-sectional diagram illustrating apower device 900 formed on an engineered substrate 910 according to anembodiment of the present invention. The power device 900 may functionas a depletion-mode (normally ON) HEMT. The power device 900 includesthe engineered substrate 910. In some embodiments, as described abovewith references to FIGS. 1, 3, and 4, the engineered substrate 910 mayinclude a polycrystalline ceramic core, a first adhesion layer coupledto the polycrystalline ceramic core, a barrier layer coupled to thefirst adhesion layer, a bonding layer coupled to the barrier layer, anda substantially single crystal layer coupled to the bonding layer.According to an embodiment, the engineered substrate 910 may furtherinclude a substantially single crystal layer 912 coupled to the bondinglayer. For example, the substantially single crystal layer 912 maycomprise substantially single layer crystalline silicon. In someembodiments, the engineered substrate 910 may further include anucleation layer 914 coupled to the substantially single crystal layer912 for facilitating the formation of the epitaxial device layersincluding substantially single crystal GaN-based materials. In someembodiments the nucleation layer 914 may be doped at levels equal to,less than, or greater than the surrounding layers. In other embodiments,the composition of the nucleation layer may be designed and implementedwith a predetermined composition.

In another embodiment, the polycrystalline ceramic core of the substrate910 comprises aluminum nitride. In some embodiments, as discussed abovewith reference to FIG. 1, the substrate 910 may further includes aconductive layer coupled to the first adhesion layer, and a secondadhesion layer coupled to the conductive layer, wherein the conductivelayer and the second adhesion layer are disposed between the firstadhesion layer and the barrier layer. In some embodiments, the firstadhesion layer may comprise a first tetraethyl orthosilicate (TEOS)oxide layer, and the second adhesion layer may comprise a second TEOSoxide layer. The barrier layer may comprise a silicon nitride layer. Theconductive layer may comprise a polysilicon layer.

According to an embodiment, the power device 900 further includes abuffer layer 920 (e.g., a gallium nitride (GaN) buffer layer) coupled tothe nucleation layer 914 and the substantially single crystal layer 912.The buffer layer 920 may be formed by epitaxial growth on either thenucleation layer 914 or the substantially single crystal layer 912.According to an embodiment, the buffer layer 920 may have a thicknessgreater than about 20 microns. In some embodiments, the buffer layer 920can be replaced with an aluminum gallium nitride (i.e., Al_(x)Ga_(1-x)N)buffer layer or be a combination of GaN and AlGaN layers. It should benoted that in some embodiments, layers discussed as GaN layers can bereplaced with Al_(x)Ga_(1-x)N layers. As an example, the buffer layer920 can be replaced with Al_(x)Ga_(1-x)N having a first set of molefractions and the barrier layer 932 can be Al_(x)Ga_(1-x)N having asecond set of mole fractions. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

A thicker buffer layer may afford the power device 900 a lower leakagecurrent and a higher breakdown voltage. In some embodiments, the bufferlayer 920 may include a plurality of layers. For example, the bufferlayer 920 may comprise an aluminum nitride layer, an aluminum galliumnitride, and a gallium nitride layer. In some embodiments, the bufferlayer 920 may include a superlattice of as many as 150 layers, eachlayer having a thickness of about 2-3 nm. A superlattice is anartificial lattice fabricated by a periodic epitaxial growth. A periodicsuperlattice is realized by growing alternate layers of twosemiconductors on top of each other, each semiconductor being grown tothe same thickness and mole fraction each time. According to someembodiments of the present invention, the advantage of using asuperlattice instead of other buffer layer designs is that thesuperlattice can reduce the sheet resistance by growing, for example,AlGaN/GaN superlattice layers over the channel region and can reduce thepotential barrier height at the hetero-interface. In other embodiments,the superlattice does not reduce the potential barrier height at thehetero-interface. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

According to an embodiment, the power device 900 further includes achannel region 930 coupled to the buffer layer 920. The channel region930 has a first end 924, a second end 926, and a central portion 928disposed between the first end and the second end. The central portionof the channel region 930 may include a channel region barrier layer. Insome embodiments, the channel region barrier layer can be barrier layer932 (e.g., an aluminum gallium nitride (Al_(x)Ga_(1-x)N) barrier layer)coupled to the buffer layer 920, and a cap layer 934 (e.g., a galliumnitride cap layer) coupled to the barrier layer 932. The cap layer helpsdecrease the reverse leakage through the Schottky contact and reduce thepeak electric field. It also protects the barrier layer 932 duringprocessing and prevents nitrogen degassing. Additionally, cap layer 934also has a positive impact on device performance such as increased gain,increased power added efficiency, and improved DC stability.

The power device 900 further includes a source contact 940 disposed atthe first end of the channel region 930, a drain contact 950 disposed atthe second end of the channel region 930, and a gate contact 960 coupledto the cap layer 934 and disposed in the central portion of the channelregion 930. In some embodiments, a via 902 can connect the sourcecontact 940 to the single crystal layer 912 in order to remove parasiticcharges in the power device. In contrast with GaN on silicon, which canutilized backside contacts through a conductive silicon substrate,embodiments of the present invention utilizing an insulating engineeredsubstrate can utilize vias such as via 902 to provide for electricalconnectivity to the single crystal layer 912. According to embodimentsof the present invention, the barrier layer 932 and the cap layer 934are formed by epitaxial growth. As illustrated in FIG. 9, in operation,a thin layer of two-dimensional electron gas (2DEG) 936 may be formed inthe buffer layer 920 at the interface between the buffer layer 920 andthe barrier layer 932. The electrons in this thin layer oftwo-dimensional electron gas 936 can move quickly without colliding withany impurities because the buffer layer 920 is undoped. This may give achannel 938 very low resistivity, in other words, very high electronmobility.

In some embodiments, the power device 900 may further include apassivation layer 970 covering the cap layer 934. The passivation layer970 may comprise silicon nitride or other insulating materials. Thepower device 900 may also include a first field plate metal 980electrically connecting to the source contact 940 forming a sourceelectrode and a second metal 990 disposed on the drain contact 950forming a drain electrode.

FIG. 10 is a simplified flowchart illustrating a method 1000 offabricating a lateral power device on an engineered substrate accordingto an embodiment of the present invention. According to an embodiment,the method 1000 includes, at 1010, forming a substrate by: providing apolycrystalline ceramic core, encapsulating the polycrystalline ceramiccore with a first adhesion shell, encapsulating the first adhesion shellwith a barrier layer, forming a bonding layer on the barrier layer, andjoining a substantially single crystal layer to the bonding layer.

The method 1000 further includes, at 1012, forming an epitaxial bufferlayer, (e.g., a gallium nitride (GaN) buffer layer) on the substrate;and at 1014, forming a channel region on the buffer layer by: forming anepitaxial barrier layer (e.g., an aluminum gallium nitride(Al_(x)Ga_(1-x)N) barrier layer) on the buffer layer and forming anepitaxial cap layer, (e.g., a gallium nitride cap layer) on the barrierlayer. The channel region has a first end and a second end, and acentral portion between the first end and the second end.

The method 1000 further includes, at 1016, forming a source contact atthe first end of the channel region; at 1018, forming a drain contact atthe second end of the channel region; and at 1020 forming a gate contacton the cap layer in the central portion of the channel region.

It should be appreciated that the specific steps illustrated in FIG. 10provide a particular method of fabricating an engineered substrateaccording to another embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 10 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 11A is a simplified schematic cross-sectional diagram illustratinga lateral power device 1100 formed on an engineered substrate accordingto another embodiment of the present invention. The power device 1100may use a recess 1136 in the channel region 1130 to function as anenhancement-mode (normally OFF) HEMT. The power device 1100 includes anengineered substrate 1110. In some embodiments, as described above withreferences to FIGS. 1, 3, and 4, the engineered substrate 1110 mayinclude a polycrystalline ceramic core, a first adhesion layer coupledto the polycrystalline ceramic core, a barrier layer coupled to thefirst adhesion layer, a bonding layer coupled to the barrier layer, anda substantially single crystal layer coupled to the bonding layer. Insome embodiments, the engineered substrate 1110 may further include asubstantially single crystal layer 1112 coupled to the bonding layer.For example, the substantially single crystal layer 1112 may comprisesubstantially single crystalline silicon. In some embodiments, theengineered substrate 1110 may further include a nucleation layer (notshown) coupled to the substantially single crystal layer 1112 forfacilitating the formation of the epitaxial device layers.

In one embodiment, the polycrystalline ceramic core of the substrate1110 comprises aluminum nitride. In some embodiments, as discussed abovewith reference to FIG. 1, the substrate 1110 may further includes aconductive layer coupled to the first adhesion layer, and a secondadhesion layer coupled to the conductive layer, wherein the conductivelayer and the second adhesion layer are disposed between the firstadhesion layer and the barrier layer. In some embodiments, the firstadhesion layer may comprise a first tetraethyl orthosilicate (TEOS)oxide layer, and the second adhesion layer may comprise a second TEOSoxide layer. The barrier layer may comprise a silicon nitride layer. Theconductive layer may comprise a polysilicon layer.

According to an embodiment, the power device 1100 further includes abuffer layer 1120 (e.g., a gallium nitride (GaN) buffer layer) coupledto the substantially single crystal layer 1112. The buffer layer 1120may be formed by epitaxial growth on the substantially single crystallayer 1112. According to an embodiment, the buffer layer 1120 may have athickness greater than about 20 microns. A thicker buffer layer mayafford the power device 1100 a lower leakage current and a higherbreakdown voltage. In some embodiments, the buffer layer 1120 mayinclude a plurality of layers. For example, the buffer layer 1120 may bea superlattice that comprises an aluminum nitride layer, an aluminumgallium nitride, and a gallium nitride layer. It will be appreciate thatone or nucleation layers may be utilized in the process for growth ofthe buffer layer 1120.

According to an embodiment, the power device 1100 further includes achannel region 1130 coupled to the buffer layer 1120. The channel region1130 has a first end 1124, a second end 1126, and a central portion 1128disposed between the first end 1124 and the second end 1126. The centralportion of the channel region 1130 may include an epitaxial channelregion barrier layer. In some embodiments, the epitaxial channel regionbarrier layer can be a barrier layer 1132 (e.g., an aluminum galliumnitride (Al_(x)Ga_(1-x)N) barrier layer) coupled to the buffer layer1120. According to embodiments of the present invention, the barrierlayer 1132 is formed by epitaxial growth. The barrier layer 1132includes a recess 1136 in the central portion of the channel region1130. The recess may be formed by removing a portion of the barrierlayer 1132 using etching or other suitable techniques. The power device1100 further includes an insulating layer 1134 disposed in the recessand coupled to the barrier layer 1132.

The power device 1100 further includes a source contact 1140 disposed atthe first end of the channel region 1130, a drain contact 1150 disposedat the second end of the channel region 1130, and a gate contact 1160coupled to insulating layer 1134 and disposed in the central portion ofthe channel region 1130. In some embodiments, via 1102 can be used toconnect the source contact 1140 to the single crystal layer 1112 inorder to remove parasitic charges in the power device 1100. Asillustrated in FIG. 11, a thin layer of two-dimensional electron gas(2DEG) 1138 may be formed in the buffer layer 1120 at the interfacebetween the buffer layer 1120 and the barrier layer 1132. The electronsin this thin layer of 2DEG 1138 can move quickly without colliding withany impurities because the buffer layer 1120 is undoped. This may givethe channel region 1130 very low resistivity, in other words, very highelectron mobility. In depletion mode, (normally OFF), the recess 1136and insulating layer 1134 block a portion of the 2DEG when the gatevoltage is zero.

In some embodiments, the buffer layer 1120 can be implemented as analuminum gallium nitride (AlGaN) buffer layer. The AlGaN buffer layercan include multiple layers. A power device that uses an Al_(x)Ga_(1-x)Nbuffer layer can introduce a channel region 1130 by fabricating theAl_(x)Ga_(1-x)N buffer layer with a first predetermined mole fraction(x) extending from the engineered substrate and a second predeterminedmole fraction (x) near the source, gate, and drain contacts. The firstpredetermined mole fraction (x) can be low, for example, less than 10%to provide the desired carrier confinement. In other embodiments, thealuminum mole fraction (x) ranges from 10% to 30%. The Al_(x)Ga_(1-x)Nepitaxial layer may be doped with iron or carbon to further increase theresistivity of the epitaxial layer, which serves as an insulating orblocking layer. Additional description related to materials used for theepitaxial buffer layer and fabrication of the epitaxial buffer layer isprovided in U.S. Provisional Patent Application No. 62/447,857, thedisclosure of which is hereby incorporated by reference in its entiretyfor all purposes.

FIG. 11B is a simplified schematic cross sectional diagram illustratinga lateral power device 1190 with an epitaxial gate structure formed onan engineered substrate according to an embodiment of the presentinvention. The power device 1190 can function as an enhancement-mode(normally OFF) HEMT by using an epitaxial gate structure such as aP-type gallium nitride-based structure 1162 to deplete the charge in thechannel region under zero bias. The power device 1190 includes anengineered substrate 1110. In some embodiments, the engineered substrate1110 may include elements as described above with references to FIGS. 1,3, and 4. According to an embodiment, the engineered substrate 1110 mayfurther include a substantially single crystal layer 1112 coupled to thebonding layer.

In some embodiments, the power device 1190 further includes a bufferlayer 1120 coupled to the substantially single crystal layer 1112. Insome embodiments the buffer layer can be another single crystalepitaxial layer, for example, other III-V materials such as AlGaN,InGaN, InAlGaN, combinations thereof, and the like. The power device1190 can include a channel region 1130 coupled to the buffer layer 1120.The central portion of the channel region can include a barrier layer1132 coupled to the buffer layer 1120. According to embodiments of thepresent invention, the barrier layer 1132 is formed by epitaxial growth.

The power device 1190 further includes a source contact 1140 disposed ata first end of the channel region 1130, a drain contact 1150 disposed ata second end of the channel region, and a gate contact 1164. In someembodiments the gate contact 1164 can be a partially, or semi-ohmiccontact, for example, titanium nitride. The partially ohmic gate contact1164 can be coupled to a P-type GaN structure 1162. The partially ohmicgate contact 1164 functions to block leakage current that would flow ifthere were a fully ohmic contact. The P-type gallium nitride structure1162 can be formed by selectively etching a P-type gallium nitrideepitaxial layer. In some embodiments, the P-type gallium nitridestructure 1162 can be formed using multiple epitaxial layers. When usingmultiple epitaxial layers, one or more layers can include materials withcompositions that differ from the composition of the barrier layer 1132or from each other, for example, AlGaN or the like.

The properties associated with the P-type gallium nitride structure1162, such as strain and piezoelectric properties, can be adjusted toreduce or limit the leakage current. Each layer of the P-type galliumnitride structure can have a different dopant concentration. In someembodiments, the P-type gallium nitride structure 1162 depletes aportion of the channel region 1130 when the gate voltage is zero. Thedepleted region allows the power device 1190 to function as anenhancement-mode (normally OFF) HEMT.

FIG. 11C is a simplified schematic cross sectional diagram illustratingan exploded view of the P-type gallium nitride structure 1162. In someembodiments, a first layer 1170 can have a first dopant concentrationand/or material composition. The second layer 1172 can have a seconddopant concentration and/or material composition. The third layer 1174can have a third dopant concentration and/or material composition. Theunique CTE matching properties of the engineered substrate 1110 providea substrate capable of supporting the growth of thicker and more complexepitaxial layers than existing substrate technologies. In someembodiments, the epitaxial gate structure can include at least oneP-type gallium nitride epitaxial layer. The leakage current for powerdevice 1190 can be controlled by the layer specific dopantconcentrations and/or material compositions. Although FIG. 11Cillustrates three epitaxial layers, one of ordinary skill in the artwould recognize many variations, modifications, and alternatives.

FIG. 12 is a simplified flowchart illustrating a method 1200 offabricating a lateral power device on an engineered substrate accordingto an embodiment of the present invention. According to an embodiment,the method 1200 includes, at 1210, forming a substrate by: providing apolycrystalline ceramic core, encapsulating the polycrystalline ceramiccore with a first adhesion shell, encapsulating the first adhesion shellwith a barrier layer, forming a bonding layer on the barrier layer, andjoining a substantially single crystal layer to the bonding layer.

The method 1200 further includes, at 1212, forming an epitaxial bufferlayer (e.g., a gallium nitride (GaN) buffer layer) on the substrate; andat 1214, forming a channel region on the buffer layer by forming anepitaxial barrier layer (e.g., an aluminum gallium nitride(Al_(x)Ga_(1-x)N) barrier layer) on the buffer layer. The channel regionhas a first end and a second end, and a central portion between thefirst end and the second end. According to an embodiment, the method1200 further includes, at 1216, forming a recess in the barrier layer inthe central portion of the channel region; and at 1218, forming aninsulating layer in the recess. The insulating layer is coupled to thebarrier layer. The method 1200 further includes, at 1220, forming asource contact at the first end of the channel region; at 1222, forminga drain contact at the second end of the channel region; and at 1224,forming a gate contact on the insulating layer in the central portion ofthe channel region.

It should be appreciated that the specific steps illustrated in FIG. 12provide a particular method of fabricating an engineered substrateaccording to another embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 12 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

High-power modules of vertical devices (p-n diodes and HEMTs) may havemany applications. For example, they may be used to drive the main motorin a hybrid vehicle power system and industrial motors. Such devicespresent particular challenges because of the need for high voltage andhigh current at the same time. Currently, these systems typically useSiC-based devices. There is now growing interest in using GaN-baseddevices due to their switching performance, which affords smallerfootprint. The engineered substrates as described above may provide thepotential of manufacturing GaN-based devices on a mass scale in aCMOS-compatible Si fab.

FIG. 13 is a simplified schematic cross-sectional diagram illustrating avertical semiconductor diode 1300 formed on an engineered substrateaccording to an embodiment of the present invention. The semiconductordiode 1300 includes an engineered substrate 1310. In some embodiments,as described above with references to FIGS. 1, 3, and 4, the engineeredsubstrate 1310 may include a polycrystalline ceramic core, a firstadhesion layer coupled to the polycrystalline ceramic core, a barrierlayer coupled to the first adhesion layer, a bonding layer coupled tothe barrier layer, and a substantially single crystal layer coupled tothe bonding layer. According to an embodiment, the engineered substrate1310 may further include a substantially single crystal layer 1312coupled to the bonding layer. For example, the substantially singlecrystal layer 1312 may comprise substantially single crystallinesilicon. In some embodiments, the engineered substrate 1310 may furtherinclude a nucleation layer (not shown) coupled to the substantiallysingle crystal layer 1312 for facilitating the formation of theepitaxial device layers.

In one embodiment, the polycrystalline ceramic core of the substrate1310 comprises aluminum nitride. In some embodiments, as discussed abovewith reference to FIG. 1, the substrate 1310 may further includes aconductive layer coupled to the first adhesion layer, and a secondadhesion layer coupled to the conductive layer, wherein the conductivelayer and the second adhesion layer are disposed between the firstadhesion layer and the barrier layer. In some embodiments, the firstadhesion layer may comprise a first tetraethyl orthosilicate (TEOS)oxide layer, and the second adhesion layer may comprise a second TEOSoxide layer. The barrier layer may comprise a silicon nitride layer. Theconductive layer may comprise a polysilicon layer.

According to an embodiment, the semiconductor diode 1300 furtherincludes a buffer layer 1320 coupled to the substantially single crystallayer 1312. In some embodiments, the buffer layer 1320 may be asuperlattice that includes a plurality layers. For example, the bufferlayer 1320 may include an aluminum nitride layer coupled to the singlecrystal silicon layer, an aluminum gallium nitride layer coupled to thealuminum nitride layer, and a gallium nitride layer coupled to thealuminum gallium nitride layer. The semiconductor diode 1300 furtherincludes a semi-insulating layer 1330 coupled to the buffer layer 1320.In one embodiment, the semi-insulating layer 1330 comprises galliumnitride.

According to some embodiments, the semiconductor diode 1300 furtherincludes a first N-type gallium nitride layer 1342 coupled to thesemi-insulating layer 1330, a second N-type gallium nitride layer 1344coupled to the first N-type gallium nitride layer 1342, and a P-typegallium nitride layer 1346 coupled to the second N-type gallium nitridelayer 1344. The first N-type gallium nitride layer 1342 may serve as theN-region of the P-N diode and may have a relatively high N-type dopingconcentration. The second N-type gallium nitride layer 1344 may serve asa drift region and may have a relatively low doping concentrationcompared to that of the first N-type gallium nitride layer 1342. TheP-type gallium nitride layer 1346 may serve as the P-region of the P-Ndiode and may have a relatively high P-type doping concentration.

In one embodiment, a portion of the second N-type gallium nitride layer1344 and a portion of the P-type gallium nitride layer 1346 are removedto expose a portion of the first N-type gallium nitride layer 1342, sothat a cathode contact 1370 may be formed thereon. In some embodiments,the cathode contact 1370 may comprise a titanium-aluminum (Ti/Al) alloyor other suitable metallic materials. The portion of the second N-typegallium nitride layer 1344 and the portion of the P-type gallium nitridelayer 1346 may be removed by etching or other suitable techniques. Ananode contact 1360 is formed on the remaining portion of the P-typegallium nitride layer 1346. In some embodiments, the anode 1360 maycomprise a nickel-platinum (Ni/Pt) alloy, a nickel-gold (Ni/Au) alloy,or the like. The semiconductor diode 1300 may further include a firstfield plate 1382 coupled to the anode contact 1360, and a second fieldplate 1384 coupled to the cathode contact 1370. In some embodiments, thesemiconductor diode 1300 may further include a passivation layer 1390covering the exposed surfaces of the P-type gallium nitride layer 1346and the first N-type gallium nitride layer 1342, and the second N-typegallium nitride layer 1344. The passivation layer 1390 may comprisesilicon nitride or other insulating materials.

In some embodiments, the second N-type gallium nitride layer 1344 mayhave a thickness that is greater than about 20 μm. The unique CTEmatching properties of the engineered substrate 1310 provide the abilityto deposit a relatively thick drift region with low dislocation densitymay afford the semiconductor diode 1300 low leakage current and a muchhigher breakdown voltage, as well as many other advantages.

FIG. 14 is a simplified flowchart illustrating a method 1400 offabricating a vertical semiconductor diode on an engineered substrateaccording to an embodiment of the present invention. The method 1400includes, at 1410, forming a substrate by: providing a polycrystallineceramic core, encapsulating the polycrystalline ceramic core with afirst adhesion shell, encapsulating the first adhesion shell with abarrier layer, form a bonding layer on the barrier layer, and joining asubstantially single crystal layer to the bonding layer.

The method 1400 further includes, at 1412, forming a buffer layer on thesingle crystal silicon layer; and at 1414, forming a semi-insulatinglayer on the buffer layer. The method 1400 further includes, at 1416,forming a first epitaxial N-type gallium nitride layer on thesemi-insulating layer; at 1418, forming a second epitaxial N-typegallium nitride layer on the first epitaxial N-type gallium nitridelayer; and at 1420 forming an epitaxial P-type gallium nitride layer onthe second epitaxial N-type gallium nitride layer. According to someembodiments, the first N-type gallium nitride layer has a first dopingconcentration. The second epitaxial N-type gallium nitride layer has asecond doping concentration less than the first doping concentration.

According to some embodiments, the method 1400 further includes, at1422, removing a portion of the second epitaxial N-type gallium nitridelayer and a portion of the epitaxial P-type gallium nitride layer toexpose a portion of the first epitaxial N-type gallium nitride layer.The method 1400 further includes, at 1424, forming an anode contact on aremaining portion of the epitaxial P-type gallium nitride layer; and at1426, forming a cathode contact on the exposed portion of the firstepitaxial N-type gallium nitride layer.

It should be appreciated that the specific steps illustrated in FIG. 14provide a particular method of fabricating an engineered substrateaccording to another embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 14 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 15 is a simplified schematic cross-sectional diagram illustrating avertical semiconductor diode 1500 formed on an engineered substrateaccording to another embodiment of the present invention. The verticalsemiconductor diode can include a first N-type gallium nitride layer1542 coupled to a cathode contact 1570, which can include a Ti/Almaterial, a second N-type gallium nitride layer 1544 coupled to thefirst N-type gallium nitride layer 1542, and a P-type gallium nitridelayer 1546 coupled to the second N-type gallium nitride layer 1544. Thefirst N-type gallium nitride layer may serve as the N-region of the P-Ndiode and may have a relatively high N-type doping concentration. Thesecond N-type gallium nitride layer 1544 may serve as a drift region andmay have a relatively low doping concentration compared to that of thefirst N-type gallium nitride layer 1542. The P-type gallium nitridelayer 1546 may serve as the P-region of the P-N diode and may have arelatively high P-type doping concentration. In some embodiments, thefirst N-type gallium nitride layer 1542, the P-type gallium nitridelayer 1546, and the second N-type gallium nitride layer 1544 can begrown using epitaxial layers. The epitaxial layers can be grown on anengineered substrate as described above with reference to FIGS. 1, 3,and 4. The epitaxial layers can be at least 10 μm in thickness and 6inches in diameter.

The vertical semiconductor diode 1500 is similar to the semiconductordiode 1300, except that the substrate 1310, the buffer layer 1320, andthe semi-insulating layer 1330 are removed after the P-N diode has beenformed, creating a “true” vertical device structure with anode 1560 andcathode 1584 on opposite sides of the wafer. In alternative embodiments,portions of the substrate 1310, the buffer layer 1320, and thesemi-insulating layer 1330 to form a contact window. The contact windowmay be used to create the vertical device structure with anode 1560 andcathode 1584 on opposite sides of the wafer.

In some embodiments, the thermal resistance of the verticalsemiconductor diode 1500 can be lowered by removing the engineeredsubstrate 1310, the buffer layer 1320, and the semi-insulating layer1330 from the structure illustrated in FIG. 13. In some embodiments, thevertical semiconductor diode 1500 may be transferred to copper, whichcan serve as a cathode electrical contact. Plated copper can also serveas a heatsink for the vertical semiconductor diode 1500. The copper canbe 30 μm in thickness and the combination of the first N-type galliumnitride layer 1542, the second N-type gallium nitride layer 1544, andthe P-type gallium nitride layer 1546 can be less than or equal to 150μm in thickness. In this embodiment, the thermal resistance of thevertical semiconductor diode can be less than or equal to 0.2 K*mm²/W.In this embodiment, the thermal resistance can be 4 times lower than adiode formed using epitaxial gallium nitride layers on a gallium nitridesubstrate.

In other embodiments, a deposited diamond layer can be formed to provideelectrical connectivity to the first N-type gallium nitride layer 1542,to improve the thermal resistance, and/or provide a cathode electricalcontact 1584. Chemical vapor deposition can be used to form thedeposited diamond layer. The deposited diamond layer can be doped toform an N-type diamond layer. The deposited diamond layer can be aheatsink for a power device. In some embodiments, the deposited diamondlayer can be 20 μm-50 μm in thickness. It should be appreciated thatcombinations of materials can be used to form the cathode electricalcontact, including copper and a deposited diamond layer.

In some configurations, epitaxial layers adjacent to the substrate havea higher incidence of defects compared to epitaxial layers grown furtherfrom the interface with the substrate. The defects can include, forexample, impurities, crystal mismatch, and dislocations. The defects inthese initial layers can account for a high percentage of the deviceresistance. The unique CTE matching properties of the engineeredsubstrate 1310 illustrated in FIG. 13 permit the first N-type galliumnitride layer 1542 adjacent to the engineered substrate 1310 to bethicker than epitaxial layers grown on a conventional substrate. In someembodiments, in addition to removing the engineered substrate 1310,layers of the first N-type gallium nitride layer 1542 adjacent to theengineered substrate 1310 can also be removed. In some embodiments, thecathode electrical contact 1584 can be formed directly on high qualitygallium nitride epitaxial layers after the substrate and initial, higherdefect, epitaxial layers have been removed.

Although removing the engineered substrate adds additional processingsteps, it may ease metallization as the power-handling contacts are madeon two different sides of the wafer, improving current spreading andheat extraction, and reducing electrical resistance. In someembodiments, to provide for a low electrical resistance the first N-typegallium nitride layer 1542 can have a dopant concentration at a level of3×10¹⁸ cm⁻³ to 5×10¹⁸ cm⁻³. In some embodiments, the electricalresistance can be less than or equal to 0.1 Ohm*mm². Also, for thevertical semiconductor diode 1300 illustrated in FIG. 13, the anodecontact 1360 may not be too close to the sidewall adjacent the cathodecontact 1370, because otherwise there might be a breakdown between theanode contact 1360 and the cathode contact 1370. The verticalsemiconductor diode 1500 eliminates this concern.

FIG. 16 is a simplified flowchart illustrating a method 1600 offabricating a vertical semiconductor diode on an engineered substrateaccording to an embodiment of the present invention. The method 1600includes, at 1610, forming a substrate by: providing a polycrystallineceramic core, encapsulating the polycrystalline ceramic core with afirst adhesion shell, encapsulating the first adhesion shell with abarrier layer, form a bonding layer on the barrier layer, and joining asubstantially single crystal layer to the bonding layer.

The method 1600 further includes, at 1612, forming a buffer layer on thesingle crystal silicon layer; and at 1614, forming a semi-insulatinglayer on the buffer layer. The method 1600 further includes, at 1616,forming a first epitaxial N-type gallium nitride layer on thesemi-insulating layer; at 1618, forming a second epitaxial N-typegallium nitride layer on the first epitaxial N-type gallium nitridelayer; and at 1620 forming an epitaxial P-type gallium nitride layer onthe second epitaxial N-type gallium nitride layer. According to someembodiments, the first N-type gallium nitride layer has a first dopingconcentration. The second epitaxial N-type gallium nitride layer has asecond doping concentration less than the first doping concentration.

According to some embodiments, the method 1600 further includes, at1622, removing the substrate, the buffer layer, and the semi-insulatinglayer to expose the bottom surface of the first N-type gallium nitridelayer. In some embodiments, initial layers of the first N-type galliumnitride layer can be removed. Several techniques can be used to removethe engineered substrate, buffer layer, and the semi-insulating layer.For example, a chemical such as hydrofluoric acid (HF) can be infusedinto the lateral sides of the wafer retaining the vertical semiconductordiode to etch out one or more of the buffer layer and thesemi-insulating layer while the ceramic core and vertical semiconductordiode epitaxial stack remain intact. Etching one or more of the bufferlayer and the semi-insulating layer separates the vertical semiconductordiode epitaxial stack from the remainder of engineered substrate whilepreserving the ceramic core for reuse. This chemical lift off processalso reduces overall stress on the vertical semiconductor diodeepitaxial stack by eliminating polishing processes. If a gallium nitridesubstrate is used, the substrate cannot be selectively removed.Additionally, gallium nitride substrates include defects such as faceflipping, residual stress, fragility, and miscut planes that affect thequality of the epitaxial layers grown thereon. In some embodiments usinga gallium nitride substrate, 75% of the resistance can be attributed todefects in the substrate. Embodiments of the present invention whichremove the substrate to expose epitaxial layers for contact formationcan thereby reduce the electrical and thermal resistance.

In some embodiments, a sacrificial layer may be used for the chemicallift off process. The sacrificial layer may use a metal such as titanium(Ti) that is highly susceptible to dissolving when exposed to HF. Insome embodiments, the sacrificial layer may comprise one of titanium(Ti), vanadium (V), chromium (Cr), tantalum (Ta), tungsten (W), rhenium(Re), silicon oxide, silicon nitride, silicon oxynitride, or acombination thereof. In addition to the sacrificial layer, a protectivelayer can be used. Protective layers may prevent diffusion of materialsfrom sacrificial layer 200, such as Ti, into GaN epitaxial layers duringepitaxial GaN growth. Additional description related to removing thesubstrate, the buffer layer, and the semi-insulating layer is providedin U.S. patent application Ser. No. 15/288,506, the disclosure of whichis hereby incorporated by reference in its entirety for all purposes.The substrate removal process described in relation to the verticalsemiconductor diode can be used for any of the devices described herein.One of ordinary skill in the art would recognize many variations,modifications, and alternatives.

The method further includes, at 1624, forming an anode contact on theepitaxial P-type gallium nitride layer; and at 1626, forming a cathodecontact on the bottom surface of the first epitaxial N-type galliumnitride layer.

It should be appreciated that the specific steps illustrated in FIG. 16provide a particular method of fabricating an engineered substrateaccording to another embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 16 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

Power devices may operate in harsh thermal conditions. For example, theymay undergo thermal cycles up to several hundreds of degrees Celsius.Some local hot points could reach as high as 250° C. Thermal cycling andbuilt-in stress may result in reliability failures, such asdelamination, breakdown of dielectrics, and the like. Thus, forming GaNdevice layers on engineered substrates characterized by a CTE that issubstantially matched to that of the power devices may eliminate oralleviate such reliability failures, because the GaN device layers mayexpand and shrink at the same rate as the engineered substrates do.

FIG. 17 is a simplified schematic cross-sectional diagram illustrating asemiconductor device 1700 formed on an engineered substrate 1710according to an embodiment of the present invention. The semiconductordevice 1700 includes a substrate 1710. In some embodiments, as describedabove with references to FIGS. 1, 3, and 4, the engineered substrate1710 may include a polycrystalline ceramic core, a first adhesion layercoupled to the polycrystalline ceramic core, a barrier layer coupled tothe first adhesion layer, a bonding layer coupled to the barrier layer,and a substantially single crystal layer coupled to the bonding layer.According to an embodiment, the engineered substrate 1710 may furtherinclude a substantially single crystal layer coupled to the bondinglayer. For example, the substantially single crystal layer may comprisesubstantially single crystalline silicon.

In one embodiment, the polycrystalline ceramic core of the substrate1710 comprises aluminum nitride. In some embodiments, as discussed abovewith reference to FIG. 1, the substrate 1710 may further includes aconductive layer coupled to the first adhesion layer, and a secondadhesion layer coupled to the conductive layer, wherein the conductivelayer and the second adhesion layer are disposed between the firstadhesion layer and the barrier layer. In some embodiments, the firstadhesion layer may comprise a first tetraethyl orthosilicate (TEOS)oxide layer, and the second adhesion layer may comprise a second TEOSoxide layer. The barrier layer may comprise a silicon nitride layer. Theconductive layer may comprise a polysilicon layer.

The semiconductor device 1700 includes a device structure 1720 formed onthe engineered substrate 1710. According to some embodiments, the devicestructure 1720 may include a plurality of epitaxial gallium nitridebased layers grown on the substantially single crystal layer of thesubstrate 1710, wherein the coefficient of thermal expansion of theplurality of epitaxial gallium nitride layers is substantially equal toa coefficient of thermal expansion of the substrate 1710.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

What is claimed is:
 1. A method of forming a semiconductor diode, the method comprising: forming a substrate by: providing a polycrystalline ceramic core; encapsulating the polycrystalline ceramic core with a first adhesion shell; encapsulating the first adhesion shell with a barrier layer; forming a bonding layer on the barrier layer; and joining a substantially single crystal layer to the bonding layer; forming a buffer layer on the substantially single crystal layer; forming a semi-insulating layer on the buffer layer; forming a first epitaxial N-type gallium nitride layer on the semi-insulating layer, the first epitaxial N-type gallium nitride layer having a first doping concentration; forming a second epitaxial N-type gallium nitride layer on the first epitaxial N-type gallium nitride layer, the second epitaxial N-type gallium nitride layer having a second doping concentration less than the first doping concentration; forming an epitaxial P-type gallium nitride layer on the second epitaxial N-type gallium nitride layer; removing a portion of the second epitaxial N-type gallium nitride layer and a portion of the epitaxial P-type gallium nitride layer to expose a portion of the first epitaxial N-type gallium nitride layer; forming an anode contact on a remaining portion of the epitaxial P-type gallium nitride layer; and forming a cathode contact on the exposed portion of the first epitaxial N-type gallium nitride layer.
 2. The method of claim 1 wherein forming the substrate further comprises: encapsulating the first adhesion shell with a conductive shell; and encapsulating the conductive shell with a second adhesion shell, wherein the barrier layer encapsulates the conductive shell.
 3. The method of claim 1 wherein the second epitaxial N-type gallium nitride layer has a thickness greater than about 20 microns.
 4. The method of claim 1 wherein the a first epitaxial N-type gallium nitride layer, the second epitaxial N-type gallium nitride layer, and the epitaxial P-type gallium nitride layer are characterized by a coefficient of thermal expansion (CTE) that is substantially equal to a CTE of the substrate.
 5. The method of claim 1 wherein the polycrystalline ceramic core comprises aluminum nitride.
 6. The method of claim 1 wherein the substantially single crystal layer comprises a substantially single crystal silicon layer.
 7. The method of claim 1 wherein forming the buffer layer comprises: forming an aluminum nitride layer coupled to the substantially single crystal layer; forming an aluminum gallium nitride layer coupled to the aluminum nitride layer; and forming a gallium nitride layer coupled to the aluminum gallium nitride layer.
 8. The method of claim 1 wherein the semi-insulating layer comprises gallium nitride.
 9. A method of forming a semiconductor diode, the method comprising: forming a substrate by: providing a polycrystalline ceramic core; encapsulating the polycrystalline ceramic core with a first adhesion shell; encapsulating the first adhesion shell with a barrier layer; forming a bonding layer on the barrier layer; and joining a substantially single crystal layer to the bonding layer; forming a first epitaxial N-type gallium nitride layer coupled to the substantially single crystal layer, the first epitaxial N-type gallium nitride layer having a first doping concentration; forming a second epitaxial N-type gallium nitride layer on the first epitaxial N-type gallium nitride layer, the second epitaxial N-type gallium nitride layer having a second doping concentration less than the first doping concentration; forming an epitaxial P-type gallium nitride layer on the second epitaxial N-type gallium nitride layer; removing at least a portion of the substrate to expose a surface of the first epitaxial N-type gallium nitride layer; forming an anode contact on the epitaxial P-type gallium nitride layer; and forming a cathode contact on the exposed surface of the first epitaxial N-type gallium nitride layer.
 10. The method of claim 9 wherein removing at least the portion of the substrate comprises removing an entirety of the substrate.
 11. The method of claim 9 wherein removing at least the portion of the substrate to expose the surface of the first epitaxial N-type gallium nitride layer further comprises removing a portion of the first epitaxial N-type gallium nitride layer.
 12. The method of claim 9 wherein forming the substrate further comprises: encapsulating the first adhesion shell with a conductive shell; and encapsulating the conductive shell with a second adhesion shell, wherein the barrier layer encapsulates the conductive shell.
 13. The method of claim 9 wherein the second epitaxial N-type gallium nitride layer has a thickness greater than about 20 microns.
 14. The method of claim 9 wherein the a first epitaxial N-type gallium nitride layer, the second epitaxial N-type gallium nitride layer, and the epitaxial P-type gallium nitride layer are characterized by a coefficient of thermal expansion (CTE) that is substantially equal to a CTE of the substrate.
 15. The method of claim 9 wherein the polycrystalline ceramic core comprises aluminum nitride.
 16. The method of claim 9 wherein the substantially single crystal layer comprises a substantially single crystal silicon layer.
 17. The method of claim 9 further comprising forming a buffer layer on the substantially single crystal layer, wherein the first epitaxial N-type gallium nitride layer is formed on the buffer layer.
 18. The method of claim 17 wherein removing at least the portion of the substrate to expose the surface of the first epitaxial N-type gallium nitride layer further comprises removing the buffer layer. 